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The test specimen consists of lines etched into a single crystal silicon substrate. They have been written by electron beam machinery, and consist of a square mesh of course lines of 500µm spacings with 50 intermediate fine lines of 10µm spacings.
The 10µm pitch has been measured using an automatic line width measuring system. The measurements obtained from wafer number ENG 1148-3 are shown below:
Position
|
Pitch Measurement µ
|
1
|
10.010
|
2
|
10.010
|
3
|
10.050
|
4
|
10.050
|
5
|
10.010
|
6
|
10.010
|
7
|
10.030
|
8
|
9.987
|
9
|
10.010
|
Max
|
10.050
|
Min
|
9.887
|
Mean
|
10.019
|
3 Sigma
|
0.059
|
Application |
LM
SEM
|
---|---|
Type |
Calibration Standards
|
Magnification | low magnification |
Packing Unit | each |
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