4"-Silicon Wafer, Ø100mm, p-doped, one side polished

The silicon wafer have a diameter of 100mm and have the following approximate properties:
Doping: boron (p type); Orientation: (100); Thickness: app. 525µm, Resistance: <20 Ohmcm. Depending on the batch thickness or resistance may vary slightly. The wafers are polished on one side. Wafer carrier/box included (no clean room quality).

Grouped product items
Product Name	Qty
4“-Silicon wafer, Ø100mm, p-doped, one side polished, each, incl. single carrier SC4CZp-525-01 €29.50 €35.11
4“-Silicon wafer, Ø100mm, p-doped, one side polished, 10 pcs, incl. storage box SC4CZp-525-10 €237.50 €282.63
4“-Silicon wafer, Ø100mm, p-doped, one side polished, 25 pcs, incl. storage box SC4CZp-525-25 €498.50 €593.22
Silicon wafer, 4 Inch, p-doped, one side polished, cut to 5x5mm, 270 Chips MN10-008145

Product Details

Description

Wafer anderer Größen und Eigenschaften sind auf Anfrage erhältlich! Bitte kontaktieren hierzu unseren technicschen Support.

tech@scienceservicces.de / 089/18 93 668 13

More Information

More Information
Material	Silicon
Type	P-Type
Dimensions	Ø100mm
Thickness	525µm
Orientation	100
Resistivity	<20 Ohmcm
Surfaces	poliert/geätzt
Shipment	Transportschale/box inklusive

4"-Silicon Wafer, Ø100mm, p-doped, one side polished

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